Press Releases for Europe 

London, July 30th, 2008 — Renesas Technology Europe today announced the forthcoming availability in Europe of the RJK0383DPA, a dual-type power MOSFET for synchronous rectification DC/DC converters. The new device achieves higher power supply efficiency and can be used for memory or ASICs in products such as laptop PCs and communication devices. Sample shipments will begin in October 2008.

RJK0383DPA incorporates dual power MOSFETs of two different types, composing a synchronous rectification DC/DC converter in a WPAK*1 (Renesas Technology package code) high-thermal-radiation package measuring 5.1 × 6.1 mm and 0.8 mm thick (max.)
The features of the RJK0383DPA are summarized below.
Advance process delivering outstanding power supply efficiency of 91.6%
The RJK0383DPA achieves higher power supply efficiency by using state-of-the-art 10th-generation power MOSFETs. For example, power supply efficiency when converting 12 V input to 1.1 V output is 91.6% (at 600 kHz switching frequency), the best in the industry. Power supply output current that power MOSFETs handle increases double from earlier dual-type products from Renesas Technology.
Enables more compact power supply design and higher mounting density through reduction of chip mounting area to half that of earlier dual-package power MOSFET configurations
By achieving higher power supply efficiency, the RJK0383DPA reduces the chip mounting area to about half that of a dual-package power MOSFET configuration, enabling a more compact synchronous rectification DC/DC converter and higher mounting density. The RJK0383DPA will be particularly effective for applications requiring compactness, such as mobile devices.
The RJK0383DPA will be followed by two additional products having different output current ratings, the RJK0384DPA and RJK0389DPA. Sample shipments of these will also begin in October 2008 in Japan.

< Product Details >
The RJK0383DPA integrates dual power MOSFETs of two different types, one as the high-side element and the other as the low-side element.*2 The high-side power MOSFET has a drain-gate load (Qgd) of 1.5 nC (at VDD=10V) to provide high switching speed and correspondingly high efficiency. The low-side power MOSFET has a low on-resistance*3 (RDS (on)) of 3.7 mΩ (typ.: at 4.5 V) to reduce power loss.
In addition, a Schottky barrier diode (SBD) is integrated with the low-side power MOSFET to minimize the wiring inductance*4 between them. This speeds up the switch of current flow to the Schottky barrier diode during the DC/DC converter’s dead time, further reducing loss. It also has the effect of suppressing voltage spikes during switching, thereby reducing noise.
The 10th-generation process used to fabricate the RJK0383DPA achieves lower loss and higher efficiency than the 9th-generation process that preceded it. On-resistance is about 30% lower while the opposing characteristics of gate charge capacitance (Qg) and drain-gate load (Qgd) are approximately 27% and 30% lower, respectively (both in comparison with earlier power MOSFET products having the same on-resistance).
The RJK0383DPA will be followed by two additional products having different output current ratings, the RJK0384DPA and RJK0389DPA. In future more products suitable for other DC/DC converter power supply specifications will be added to the series in response to the needs of the market.

< Notes >

1. WPAK high-thermal-radiation package: In a power MOSFET, heat is generated due to on-resistance, switching, and similar loss factors. The amount of current that can be controlled is determined by how efficiently this heat can be released. The structure of a WPAK package allows heat dissipation to the board from a heat-dissipating die pad on the rear surface, enabling a larger current to be controlled.
2. High-side and low-side elements: These elements are used as non-isolated DC-DC converter switches, enabling voltage conversion to be performed by means of alternate on/off switching between the high side and low side. For the high-side on-period a short pulse of approximately 10% of one cycle is controlled, and the remaining 90% is the on-period of the low-side element, so an element whose characteristics emphasize switching speed is selected for the high-side element, and an element whose characteristics emphasize low on-resistance is selected for the low-side element.
3. On-resistance: The operational resistance of a power MOSFET. On-resistance is the parameter that most affects power MOSFET performance, with performance increasing as on-resistance decreases.
4. Wiring inductance: Parasitic inductance that is naturally present in wiring and has a value approximately proportional to the length of the wiring. The larger this value, the longer the current switching time between the power MOSFET and schottky barrier diode and the greater the switching loss.

* Product names, company names, or brands mentioned are the property of their respective owners.